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| Title: | Betere galliumnitride halfgeleiders door omgekeerde piramidedefecten |
| Author(s): | Bohnen, T. (298971631) |
| Publication year: | 2010 |
| Document type: | Article / Letter to editor |
| Journal: | Nederlands Tijdschrift voor Natuurkunde |
| ISSN: | 0926-4264 |
| Volume: | vol. 76 |
| Issue: | iss. 10 |
| Start page: | p. 338 |
| End page: | p. 343 |
| Number of pages: | 6 p. |
| Subject: | Applied Materials Science |
| Organization: | Applied Materials Science |
| Appears in Collections: | Academic bibliography
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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2066/83317
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