Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures

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Title:	Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures
Author(s):	Kamler, G.; Borysiuk, J.; Weyher, J.L. ; Presz, A.; Wozniak, M. ; Grzegory, I.
Publication year:	2004
Source:	European Physical Journal-applied Physics, vol. 27, iss. 1-3, (2004), pp. 247-249
ISSN:	1286-0042
DOI:	https://doi.org/10.1051/epjap:2004103
Publication type:	Article / Letter to editor
Please use this identifier to cite or link to this item : http://hdl.handle.net/2066/60165
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Subject:	Applied Materials Science
Organization:	Applied Materials Science Environmental Science
Journal title:	European Physical Journal-applied Physics
Volume:	vol. 27
Issue:	iss. 1-3
Page start:	p. 247
Page end:	p. 249
Abstract:	In this communication, results are presented of the application of etching in molten E+M etch (KOH-NaOH eutectic mixture with 10% MgO) for studying defects in GaN. The method was used to study defects on differently oriented cleavage and basal planes of GaN single crystals, MOCVD-, MBE- and HVPE-grown epitaxial layers and LD and LED structures. Dislocations, dislocation loops and stacking faults have been revealed on (10 (1) over bar0), (1 (3) over bar 10) and {0001} Ga- and N-polar planes. Diversified etch pit morphology was observed depending on the crystallographic orientation of the etched samples and was correlated with the crystallographic symmetry of the GaN lattice. Etching results were calibrated using TEM analysis.