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 | publisher's version | 3.04 MB | Adobe PDF | Under Embargo
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| Title: | The influence of InxGa1 xAs and GaAs1 yPy layers surrounding the AlAs release layer in the epitaxial lift-off |
| Author(s): | Niftrik, A.T.J. van (298980533)
Bauhuis, G.J. (305358200)
Schermer, J.J. (245880399)
Deelen, J. van (308103262)
Mulder, P. (072533579)
Larsen, P.K. (158838769) |
| Publication year: | 2007 |
| Document type: | Article / Letter to editor |
| Journal: | Crystal Growth & Design |
| ISSN: | 1528-7483 |
| Volume: | vol. 7 |
| Issue: | iss. 12 |
| Start page: | p. 2472 |
| End page: | p. 2480 |
| Subject: | Applied Materials Science |
| Organization: | Applied Materials Science
UMCN Extern |
| Appears in Collections: | Academic bibliography
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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2066/36591
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