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| File |
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Size | Format |
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 | publisher's version | 175.09 kB | Adobe PDF | View/Open |
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| Title: | Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates |
| Author(s): | Pernot, J.
Bustarret, E.
Rudzinski, M. (308288882)
Hageman, P.R. (106962205)
Larsen, P.K. (158838769) |
| Publication year: | 2007 |
| Document type: | Article / Letter to editor |
| Journal: | Journal of applied physics |
| ISSN: | 0021-8979 |
| Volume: | vol. 101 |
| Issue: | iss. 3 |
| Start page: | p. 033536-1 |
| End page: | p. 033536-5 |
| Subject: | Applied Materials Science |
| Organization: | Applied Materials Science |
| Appears in Collections: | Academic bibliography
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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2066/36503
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