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 | publisher's version | 1.5 MB | Adobe PDF | Under Embargo
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| Title: | Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods |
| Author(s): | Weyher, J.L. (305358316) |
| Publication year: | 2006 |
| Document type: | Article / Letter to editor |
| Journal: | Superlattices and microstructures |
| ISSN: | 0749-6036 |
| Volume: | vol. 40 |
| Issue: | iss. 4-6 |
| Start page: | p. 279 |
| End page: | p. 288 |
| Subject: | Applied Materials Science |
| Organization: | Applied Materials Science |
| Appears in Collections: | Academic bibliography
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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2066/36050
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