Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
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Publication year
2006Source
IEEE Transactions on Electron Devices, 53, 9, (2006), pp. 2413-2417ISSN
Publication type
Article / Letter to editor
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Organization
Applied Materials Science
Journal title
IEEE Transactions on Electron Devices
Volume
vol. 53
Issue
iss. 9
Page start
p. 2413
Page end
p. 2417
Subject
Applied Materials ScienceThis item appears in the following Collection(s)
- Academic publications [238430]
- Electronic publications [122512]
- Faculty of Science [34989]
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