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 | publisher's version | 536.61 kB | Adobe PDF | Under Embargo
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| Title: | Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study |
| Author(s): | Dam, C.E.C.
Hageman, P.R. (106962205)
Larsen, P.K. (158838769) |
| Publication year: | 2005 |
| Document type: | Article / Letter to editor |
| Journal: | Journal of Crystal Growth |
| ISSN: | 0022-0248 |
| Volume: | vol. 285 |
| Issue: | iss. 1-2 |
| Start page: | p. 31 |
| End page: | p. 40 |
| Subject: | Applied Materials Science |
| Organization: | Applied Materials Science |
| Appears in Collections: | Academic bibliography
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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2066/33228
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