Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

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Title:	Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition
Author(s):	Macht, L.J. (285602365) Weyher, J.L. (305358316) Grzegorczyk, A.P. (292590091) Larsen, P.K. (158838769)
Publication year:	2005
Document type:	Article / Letter to editor
Journal:	Physical Review B
ISSN:	1098-0121
Volume:	vol. 71
Issue:	iss. 7
Start page:	p. 073309-1
End page:	p. 073309-4
Subject:	Applied Materials Science
Organization:	Applied Materials Science
Appears in Collections:	Academic bibliography

Please use this identifier to cite or link to this item: http://hdl.handle.net/2066/33011