Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD

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Title:	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD
Author(s):	Rudzinski, M. (308288882) Hageman, P.R. (106962205) Grzegorczyk, A.P. (292590091) Macht, L.J. (285602365) Rodle, T.C. Jos, H.F.F. (072271930) Larsen, P.K. (158838769)
Publication year:	2005
Document type:	Article / Letter to editor
Journal:	Physica Status Solidi C
ISSN:	1610-1634
Volume:	vol. 2
Issue:	iss. 7
Start page:	p. 2141
End page:	p. 2144
Subject:	Applied Materials Science
Organization:	Applied Materials Science
Appears in Collections:	Academic bibliography

Please use this identifier to cite or link to this item: http://hdl.handle.net/2066/32640