High quality GaN layers on Si(111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer
Publication year
2001Source
Physica Status Solidi A-Applied Research, 188, 2, (2001), pp. 523-526ISSN
Publication type
Article / Letter to editor
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Organization
Applied Materials Science
Journal title
Physica Status Solidi A-Applied Research
Volume
vol. 188
Issue
iss. 2
Page start
p. 523
Page end
p. 526
Subject
Applied Materials ScienceThis item appears in the following Collection(s)
- Academic publications [238441]
- Faculty of Science [34986]
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