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Browsing by Faculty / Department Applied Materials Science
Showing results 21 to 40 of 114
| Full Text | Issue Date | Title | Author(s) | | 2010 | Development of HVPE process for bulk-like growth of GaN | Ashraf, H. |
| 2007 | A diffusion and reaction related model of the epitaxial lift-off process | Niftrik, A.T.J. van; Schermer, J.J.; Bauhuis, G.J., et al |
| 2006 | Direct deposition of diamond films on steel using a three-step process | Gowri, M.; Li, H.; Schermer, J.J., et al |
| 2005 | Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN | Tuomisto, F.; Saarinen, K.; Lucznik, B., et al |
| 2004 | The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations | Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R., et al |
| 2006 | Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition | Tengborn, E.; Rummukainen, M.; Tuomisto, F., et al |
| 2005 | An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology | Macht, L.J.; Kelly, J.J.; Weyher, J.L., et al |
| 2006 | Electrochemical-chemical deposition and etching - Study of wet chemical of AlxGa1-xInP2 films using hydrochloric Acid | Deelen, J. van; Mulder, P.; Bauhuis, G.J., et al |
| 2005 | Electrochemistry and etching of wide bandgap chemically resistant semiconductors | Kelly, J.J.; Macht, L.J.; Dorp, D.H. van, et al |
| 2010 | Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE | Bohnen, T.; Ashraf, H.; Dreumel, G.W.G. van, et al |
| 2010 | Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers | Buijnsters, J.G.; Vazquez, L.; Dreumel, G.W.G. van, et al |
| 2005 | Epitaxial Lift-Off for large area thin film III/V devices | Schermer, J.J.; Mulder, P.; Bauhuis, G.J., et al |
| 2004 | Etching AlAs with HF for epitaxial lift-off applications | Voncken, M.M.J.; Schermer, J.J.; Niftrik, A.T.J. van, et al |
| 2006 | Etching, Raman and PL study of thick HVPE-grown GaN | Weyher, J.L.; Lewandowska, R.; Macht, L.J., et al |
| 2006 | Experimental and numerical aspects of GaN growth by HVPE | Dam, Cornelia Elizabeth Carolina |
| 2006 | GaN grown on sapphire by MOCVD : material for HEMT structures | Grzegorczyk, Andrzej Pawel |
| 2008 | GaN grown on SiC by MOCVD: Material for HEMT applications | Rudzinski, M. |
| 2011 | GaN on diamond: a hot combination? | Dreumel, G.W.G. van |
| 2011 | A genuine circular contact grid pattern for solar cells | Bissels, G.M.M.W.; Asselbergs, M.A.H.; Schermer, J.J., et al |
| 2009 | Growth and adhesion of hot filament chemical vapor deposited diamond coatings on surface modified high speed steel | Gowri, M.; Enckevort, W.J.P. van; Schermer, J.J., et al |
Showing results 21 to 40 of 114
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