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Browsing by Faculty / Department Applied Materials Science

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Showing results 21 to 40 of 114
Full TextIssue DateTitleAuthor(s)
2010Development of HVPE process for bulk-like growth of GaNAshraf, H.
2007A diffusion and reaction related model of the epitaxial lift-off processNiftrik, A.T.J. van; Schermer, J.J.; Bauhuis, G.J., et al
2006Direct deposition of diamond films on steel using a three-step processGowri, M.; Li, H.; Schermer, J.J., et al
2005Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaNTuomisto, F.; Saarinen, K.; Lucznik, B., et al
2004The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulationsDam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R., et al
2006Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor depositionTengborn, E.; Rummukainen, M.; Tuomisto, F., et al
2005An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphologyMacht, L.J.; Kelly, J.J.; Weyher, J.L., et al
2006Electrochemical-chemical deposition and etching - Study of wet chemical of AlxGa1-xInP2 films using hydrochloric AcidDeelen, J. van; Mulder, P.; Bauhuis, G.J., et al
2005Electrochemistry and etching of wide bandgap chemically resistant semiconductorsKelly, J.J.; Macht, L.J.; Dorp, D.H. van, et al
2010Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPEBohnen, T.; Ashraf, H.; Dreumel, G.W.G. van, et al
2010Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layersBuijnsters, J.G.; Vazquez, L.; Dreumel, G.W.G. van, et al
2005Epitaxial Lift-Off for large area thin film III/V devicesSchermer, J.J.; Mulder, P.; Bauhuis, G.J., et al
2004Etching AlAs with HF for epitaxial lift-off applicationsVoncken, M.M.J.; Schermer, J.J.; Niftrik, A.T.J. van, et al
2006Etching, Raman and PL study of thick HVPE-grown GaNWeyher, J.L.; Lewandowska, R.; Macht, L.J., et al
2006Experimental and numerical aspects of GaN growth by HVPEDam, Cornelia Elizabeth Carolina
2006GaN grown on sapphire by MOCVD : material for HEMT structuresGrzegorczyk, Andrzej Pawel
2008GaN grown on SiC by MOCVD: Material for HEMT applicationsRudzinski, M.
2011GaN on diamond: a hot combination?Dreumel, G.W.G. van
2011A genuine circular contact grid pattern for solar cellsBissels, G.M.M.W.; Asselbergs, M.A.H.; Schermer, J.J., et al
2009Growth and adhesion of hot filament chemical vapor deposited diamond coatings on surface modified high speed steelGowri, M.; Enckevort, W.J.P. van; Schermer, J.J., et al
Showing results 21 to 40 of 114

 

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