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Browsing by Faculty / Department Applied Materials Science

Full Text	Issue Date	Title	Author(s)
	2001	Local probing of the polarization state in thin Pb(ZrTi)O-3 films during polarization reversal	Mishina, E.D.; Sherstyuk, N.E.; Pevtsov, E.P.; Vorotilov, K.A.; Sigov, A.S., et al
	2002	Nonlinear optical and electrostatic force microscopy for ferroelectric polarization imaging	Mishina, E.D.; Sherstyuk, N.E.; Vorotilov, K.A.; Sigov, A.S.; Barberi, R., et al
	2004	Etching AlAs with HF for epitaxial lift-off applications	Voncken, M.M.J.; Schermer, J.J.; Niftrik, A.T.J. van; Bauhuis, G.J.; Mulder, P., et al
	2004	NMR investigation of atomic ordering in AlxGa1-xAs thin films	Degen, C.; Tomaselli, M.; Meier, B.H.; Voncken, M.M.J.; Kentgens, A.P.M.
	2004	Thin film GaAs solar cells with increased quantum efficiency due to light reflection	Bauhuis, G.J.; Schermer, J.J.; Mulder, P.; Voncken, M.M.J.; Larsen, P.K.
	2004	Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process	Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.
	2004	Parameter study of intrinsic carbon doping of AlxGa1-xAs by MOCVD	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Larsen, P.K.
	2004	Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures	Kamler, G.; Borysiuk, J.; Weyher, J.L.; Presz, A.; Wozniak, M., et al
	2004	The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Dorsman, R.; Kleijn, C.R., et al
	2004	Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods	Weyher, J.L.; Macht, L.J.
	2004	Tuning the surface state dimensionality of Cu nanostripes	Lobo, J.; Michel, E.G.; Bachmann, A.R.; Speller, S.E.; Kuntze, J., et al
	2004	n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy	Hageman, P.R.; Schaff, W.J.; Janinski, J.; Lilienthal-Weber, Z.
	2004	Microstructure characterisation of titanium dioxide nanodispersions and thin films for dye-sensitized solar cell devices	Almeida, P. de; Deelen, J. van; Catry, C.; Sneyers, H.; Pataki, T., et al
	2004	Low dislocation density, high power InGaN laser diodes	Perlin, P.; Leszczynski, M.; Prystawko, P.; Wisniewski, P.; Czernetzki, R., et al
	2004	Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy	Jursenas, S.; Miasojedovas, S.; Kurilcik, G.; Zukauskas, A.; Hageman, P.R.
	2004	NMR investigation of atomic ordering in AlxGa1-xAs thin films	Degen, C.; Tomaselli, M.; Meier, B.H.; Voncken, M.M.J.; Kentgens, A.P.M.
	2004	The adhesion of hot-filament CVD diamond films on AISI type 316 austenitic stainless steel	Buijnsters, J.G.; Shankar, P.; Enckevort, W.J.P. van; Schermer, J.J.; Meulen, J.J. ter
	2004	TEM observation of nanopipes in heteroepitaxial GaN	Jezierska, E.; Weyher, J.L.; Rudzinski, M.; Borysiuk, J.
	2004	Nanopipes in GaN: photo-etching and TEM study	Lazar, S.; Weyher, J.L.; Macht, L.J.; Tichelaar, F.D.; Zandbergen, H.W.
	2004	Strain-accelerated HF etching of AlAs for epitaxial lift-off	Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Niftrik, A.T.J. van; Larsen, P.K.