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Browsing by Author Lucznik, B.

Full Text	Issue Date	Title	Author(s)
	2007	The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy	Lewandowska, R.; Weyher, J.L.; Kelly, J.J.; Konczewicz, L.; Lucznik, B.
	2006	Etching, Raman and PL study of thick HVPE-grown GaN	Weyher, J.L.; Lewandowska, R.; Macht, L.J.; Lucznik, B.; Grzegory, I.
	2005	Defects in GaN single crystals and homoepitaxial structures	Weyher, J.L.; Kamler, G.; Nowak, G.; Borysiuk, J.; Lucznik, B., et al
	2005	Growth of AlN, GaN and InN from the solution	Krukowski, S.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Suski, T., et al
	2005	Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN	Tuomisto, F.; Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H., et al
	2004	Low dislocation density, high power InGaN laser diodes	Perlin, P.; Leszczynski, M.; Prystawko, P.; Wisniewski, P.; Czernetzki, R., et al