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Browsing by Author Kamler, G.
Showing results 1 to 5 of 5
| Full Text | Issue Date | Title | Author(s) | | 2006 | Selective etching of dislocations in violet-laser diode structures | Kamler, G.; Smalc, J.; Wozniak, M.; Weyher, J.L.; Czernecki, R., et al |
| 2005 | Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers | Kamler, G.; Borysiuk, J.; Weyher, J.L.; Czernecki, R.; Leszczynski, M., et al |
| 2005 | Defects in GaN single crystals and homoepitaxial structures | Weyher, J.L.; Kamler, G.; Nowak, G.; Borysiuk, J.; Lucznik, B., et al |
| 2004 | Low dislocation density, high power InGaN laser diodes | Perlin, P.; Leszczynski, M.; Prystawko, P.; Wisniewski, P.; Czernetzki, R., et al |
| 2004 | Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures | Kamler, G.; Borysiuk, J.; Weyher, J.L.; Presz, A.; Wozniak, M., et al |
Showing results 1 to 5 of 5
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