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Browsing by Author Borysiuk, J.

Full Text	Issue Date	Title	Author(s)
	2007	Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates	Rudzinski, M.; Jezierska, E.; Weyher, J.L.; Macht, L.; Hageman, P.R., et al
	2005	Defects in GaN single crystals and homoepitaxial structures	Weyher, J.L.; Kamler, G.; Nowak, G.; Borysiuk, J.; Lucznik, B., et al
	2005	Defect-selective etching of SiC	Weyher, J.L.; Lazar, S.; Borysiuk, J.; Pernot, J.
	2005	Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers	Kamler, G.; Borysiuk, J.; Weyher, J.L.; Czernecki, R.; Leszczynski, M., et al
	2005	Growth of AlN, GaN and InN from the solution	Krukowski, S.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Suski, T., et al
	2004	TEM observation of nanopipes in heteroepitaxial GaN	Jezierska, E.; Weyher, J.L.; Rudzinski, M.; Borysiuk, J.
	2004	Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures	Kamler, G.; Borysiuk, J.; Weyher, J.L.; Presz, A.; Wozniak, M., et al
	2004	Low dislocation density, high power InGaN laser diodes	Perlin, P.; Leszczynski, M.; Prystawko, P.; Wisniewski, P.; Czernetzki, R., et al