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Browsing by Author Saarinen, K.

Full Text	Issue Date	Title	Author(s)
	2006	Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition	Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M., et al
	2005	Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN	Tuomisto, F.; Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H., et al